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20V P-Channel Power MOSFET General Description
The AAT7361 is a low threshold dual MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechTM's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a larger footprint has been squeezed into the footprint of a TSOP6 package.
AAT7361
Features
* * * VDS(MAX) = -20V ID(MAX) 1 = -3.0A @ 25C Low RDS(ON): * 100 m @ VGS = -4.5V * 175 m @ VGS = -2.5V
Dual TSOPJW-8 Package Applications
* * * Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment
D1 8
Preliminary Information
Top View
D1 7 D2 6 D2 5
1 S1
2 G1
3 S2
4 G2
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25C unless otherwise noted) Value
-20 12 3.0 2.4 9 -1.0 1.4 0.9 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C
1
Units
V
TA = 25C TA = 70C
1
Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation
1
A
TA = 25C TA = 70C
W C
Operating Junction and Storage Temperature Range
Thermal Characteristics
Symbol
RJA RJA2 RJF
Description
Junction-to-Ambient steady state, one FET on Junction-to-Ambient t<5 seconds 1 Junction-to-Foot 1
1
Typ
124 74 66
Max
155 90 80
Units
C/W C/W C/W
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20V P-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25C unless otherwise noted) Conditions
VGS=0V, ID=-250A VGS=-4.5V, ID=-3.0A VGS=-2.5V, ID=-2.3A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250A VGS=12V, VDS=0V VGS=0V, VDS=-20V VGS=0V, VDS=-16V, TJ=70C 3 VDS=-5V, ID=-3.0A VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V, VDS=-10V,
2
AAT7361
Min
-20
Typ
Max
Units
V
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current
2
80 140 -9 -0.6
100 175
m A V nA A S
100 -1 -5 5 6 1.3 1.7 7 13 15 20 -1.3 -1.0
gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1
RD=3.3, RD=3.3, RD=3.3, RD=3.3, RD=3.3, RD=3.3, RD=3.3,
VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V,
nC
RG=6 RG=6 RG=6 RG=6
ns
VGS=0, IS=-3.0A
V A
Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design, however RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 s Note 3: Guaranteed by design. Not subject to production testing.
2
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20V P-Channel Power MOSFET Typical Characteristics
(TJ = 25C unless otherwise noted) Output Characteristics
9 7.5 6
AAT7361
Transfer Characteristics
9 7.5 6
5V 4.5V 4V
3.5V 3V ID (A) 2.5V 2V 1.5V
VD = VG
25C
IDS (A)
4.5 3 1.5 0 0 0.5 1 1.5 2 2.5
4.5 3 1.5 0
125C -55C
0 1 2 3 4 5
3
VDS (V)
VGS (V)
On-Resistance vs. Drain Current
0.3
On-Resistance vs. Gate to Source Voltage
0.4 0.32
ID = 3A
RDS(ON) ()
0.2
RDS(ON) ()
VGS = 2.5 V
0.1
0.24 0.16 0.08
VGS = 4.5 V
0 0 1.5 3 4.5 6 7.5 9
0 0 1 2 3 4 5
ID (A)
VGS (V)
On-Resistance vs. Junction Temperature
1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150
Threshold Voltage
0.5 0.4
Normalized RDS(ON)
VGS(th) Variance (V)
VGS = 4.5V ID = 3A
ID = 250A
0.3 0.2 0.1 0 -0.1 -0.2 -0.3 -50 -25 0 25 50 75 100 125 150
TJ (C)
T J (C)
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20V P-Channel Power MOSFET Typical Characteristics
(TJ = 25C unless otherwise noted) Gate Charge
5 4 3 2 1 0 0 2 4 6 8 0.1 0 0 .2 0.4 0 .6 0.8 1 1 .2 100
AAT7361
Source-Drain Diode Forward Voltage
VD = 10V ID = 3.0A
10
VGS (V)
IS (A)
1
TJ = 150C
TJ = 25C
VSD (V) QG, Charge (nC)
Capacitance
700 600
Single Pulse Power, Junction To Ambient
50 45 40 35
Capacitance (pF)
500 400 300 200 100 0 0
Power (W)
5 10 15 20
Ciss
30 25 20 15 10 5 0 0.0001 0.001 0.01 0.1 1 10 100 1000
Coss Crss
VDS (V)
Time (s)
Transient Thermal Response, Junction to Ambient
Normalized Effective Transient Thermal Impedance
10
1
.5 .2 .1 .05 .02
0.1
0.01
Single Pulse
0.001 0.0001
0.001
0.01
0.1
1
10
100
1000
4
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20V P-Channel Power MOSFET Ordering Information
Package TSOPJW-8 Marking1 JYXYY Part Number (Tape and Reel) AAT7361ITS-T1
AAT7361
Note 1: XYY = assembly and date code.
Package Information
TSOPJW-8
0.325 0.075
2.40 0.10
0.65 BSC 0.65 BSC 0.65 BSC
2.85 0.20
7 3.025 0.075
0.9625 0.0375 1.0175 0.0925
0.04 REF
0.055 0.045
0.010
0.15 0.05
0.45 0.15 2.75 0.25
All dimensions in millimeters.
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20V P-Channel Power MOSFET
AAT7361
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6
7361.2003.09.0.62

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